? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 25 a i dm t c = 25 c, pulse width limited by t jm 130 a i a t c = 25 c 44a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v f c mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 22a, note 1 154 m hiperfet tm power mosfet q3-class IXFR44N50Q3 v dss = 500v i d25 = 25a r ds(on) 154m t rr 250ns ds100382a(05/12) n-channel enhancement mode fast intrinsic rectifier features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z low intrinsic gate resistance z 2500v~ electrical isolation z fast intrinsic rectifier z avalanche rated z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls (electrically isolated tab) g = gate d = drain s = source isoplus247 e153432 g s d isolated tab preliminary technical information
IXFR44N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 22a, note 1 17 28 s c iss 4800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 625 pf c rss 56 pf r gi gate input resistance 0.13 t d(on) 30 ns t r 13 ns t d(off) 37 ns t f 9 ns q g(on) 93 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 22a 34 nc q gd 44 nc r thjc 0.41 c/w r thcs to-247 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 44 a i sm repetitive, pulse width limited by t jm 176 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns i rm 13.2 a q rm 1.4 c i f = 22a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 22a r g = 2 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2012 ixys corporation, all rights reserved IXFR44N50Q3 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 01234567 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 9 v 7 v 8 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes 6 v 5v v gs = 10v 8v 7 v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 102030405060708090100 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes
IXFR44N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100110120130 q g - nanocoulombs v gs - volts v ds = 250v i d = 22a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2012 ixys corporation, all rights reserved ixys ref: f_44n50q3(q7)9-09-11 IXFR44N50Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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